Bit-Error and Soft-Error Resilient 7T/14T SRAM with 150-nm FD-SOI Process
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چکیده
منابع مشابه
Bit-Error and Soft-Error Resilient 7T/14T SRAM with 150-nm FD-SOI Process
This paper presents measurement results of bit error rate (BER) and soft error rate (SER) improvement on 150-nm FD-SOI 7T/14T (7-transistor/14-transistor) SRAM test chips. The reliability of the 7T/14T SRAM can be dynamically changed by a control signal depending on an operating condition and application. The 14T dependable mode allocates one bit in a 14T cell and improves the BER in a read ope...
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ژورنال
عنوان ژورنال: IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
سال: 2012
ISSN: 0916-8508,1745-1337
DOI: 10.1587/transfun.e95.a.1359